Idaho Microfabrication Lab

Equipment Characterization

Oxidation

Process Control Chart

45min at 30% O2 with temp = 1000 deg.C will yield approx. 1000 Angstroms of oxide

Available Sputter Targets and Deposition Rates

Expected deposition rates using CrC150 (some target dep rates are unknown at this time)

Material DC Power Deposition Pressure Rate (A/min)
Al 50W 5 mTorr 70
Au 20W 5 mTorr 150
Ni 50W 5 mTorr 40
Pd 50W 5 mTorr
Cu 5 mTorr
Ti 50W 5 mTorr 30
Cr 50W 5 mTorr 83

Chemical Mechanical Characterization

Expected copper removal rates using process parameters shown below

Slurry Pad TS/SS(rpm) Down Force (psi) Removal Rate(um/min)
Fujimi Planarlite TWI 60/60 1-3 1
Cabot 5003 TWI 60/60 1-3 0.5