ENGR 549
- Quantum Effects in MOS Devices -
Prof. Bill Knowlton, Boise State University
TEXTBOOKS:
- Required:
- “Quantum Mechanics: An Introduction for Device Physicists & Electrical Engineers”, David K. Ferry, 2nd Edition, (IOP Ltd: 2001).
- Recommended:
- “Introductory Quantum Mechanics”, Richard L. Liboff, 4th Edition (Addison Wesley – 2003).
- “Physics of Semiconductor Devices”, J-P. Colinge and C.A. Colinge, (Kluwer Academic Publishers – 2002).
- “Fundamentals of Modern VLSI Devices”, Y. Taur & T.H. Ning, (Cambridge University Press – 1998).
Final Exam: Date: Tuesday, December 17; Time: 1pm to 3pm; Room: MEC 113
Course Syllabus* Course Evaluation for Fall 2002* Self Evaluation Form*
| Project | Due Date |
| Project 1: p-n Junction | 9/17/02 |
| Project 2: MOS Structure | 10/3/02 |
| Project 3: Square Potential | 11/7/02 |
| Project 3b: Square Potential & MOS Structure | 11/18/02 |
| Project 4: WKB Approximation to a Triangular Potential (FN & Direct tunneling) | 12/03/02 |
| Project 5: MOS Device and Triangular Potential | 12/17/02 |
Mathematica Links: