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ENGR 549

 – Quantum Effects in MOS Devices –

Prof. Bill Knowlton, Boise State University

TEXTBOOKS:

  • Required: 
    • “Quantum Mechanics: An Introduction for Device Physicists & Electrical Engineers”, David K. Ferry, 2nd Edition, (IOP Ltd: 2001).
  • Recommended:
    • “Introductory Quantum Mechanics”, Richard L. Liboff, 4th Edition (Addison Wesley – 2003).
    • “Physics of Semiconductor Devices”, J-P. Colinge and C.A. Colinge, (Kluwer Academic Publishers – 2002).
    • “Fundamentals of Modern VLSI Devices”, Y. Taur & T.H. Ning, (Cambridge University Press – 1998).

Final Exam: Date: Tuesday, December 17;  Time: 1pm to 3pm; Room: MEC 113

Course Syllabus*             Course Evaluation for Fall 2002*                Self Evaluation Form*

Project Due Date
Project 1: p-n Junction 9/17/02
Project 2: MOS Structure 10/3/02
Project 3: Square Potential 11/7/02
Project 3b: Square Potential & MOS Structure 11/18/02
Project 4: WKB Approximation to a Triangular Potential (FN & Direct tunneling) 12/03/02
Project 5: MOS Device and Triangular Potential 12/17/02

Mathematica Links: