Michael Ogas
Graduate Research Assistant
Department of Electrical and Computer Engineering
Michael L. Ogas joined the Knowlton Research Group as a senior in Electrical and Computer Engineering in the summer of 2003. He initially began modeling noise in 3.2 nm gate oxide devices as a follow up project to the work described by Lawrence, C., et al., Pulse voltage stressing of ultrathin gate oxides in NMOS devices, poster session at the IEEE International Integrated Reliability Workshop, (October 21-24, 2002).
In addition, Ogas has been actively involved in the research of Simple Integrated Circuit Building Blocks (SICBBs). These studies focus on the characterization of dielectric breakdown of 3.2 nm and 2.0 nm devices, and their effect on circuit performance. He presented these findings as a co-author and presenter of a paper titled “Survey of Oxide Degradation in Inverter Circuits Using 2.0 nm MOS Devices” at the IEEE International Integrated Reliability Workshop in 2004.
Ogas is currently a graduate student at Boise State University. His primary focus includes physical defects in SiO2 and HfO2 gate dielectrics, noise modeling, and programming various applications for the lab.
Visit Michael's personal web page: ogasart.com