Multi-Dielectric Energy Band Diagram Program
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Metal - Multi Insulator - X
Metal - Multi Insulator - Metal - Multi Insulator - X
- where X is a metal or semiconductor
For previous Dual Oxide Band Diagram Program, click here.
About the Program
Complex MOS Band Diagrams
Parameters Calculated
Our research group has developed an easy to use interactive simulation tool for complex multilayer dielectric MOS and MIM devcies which runs on a PC. This program is useful for visualizing approximations of energy band diagrams and performing back of the envelope calculations of important parameters for these diagrams. In more detail, the program can do the following:
- Draw the band diagram for MOS devices in static mode
- Draw the band diagrams for MIM and MOS gate stacks with various dielectrics including high K dielectrics
- Calculate parameters such as energy, electric field, charge, and potential as a function of distance for applied voltages both in inversion and accumulation regimes
- Calculate device parameters such as threshold voltage, flat band voltage, equivalent oxide thickness (EOT), stack capacitance, layer capacitance, tunneling distance, electric field, voltage drop, etc.
- Plot and export device parameters as a function of gate voltage
- Insert fixed charge into dielectrics
Assumptions Used in the Program
In order to draw the diagram and calculate the parameter, many simplifying assumptions have been made and incorporated into the program:
- Ionized dopant temperatures
- Fermi-Dirac approximated with Maxwell-Boltzmann statistics
- Semiconductor doping >> intrinsic carrier concentration
- Complete ionization of dopant atoms
- Non-degeneracy in the semiconductor
- Charge sheet approximation
- Uniformly doped silicon
- Intrinsic Fermi level equals half the bandgap in the semiconductor
- Oxides act as perfect capacitors in series
- Metal gate
Note: Please understand that this program is to be used to gain familiarity of energy band diagrams under bias and is not to meant to replace more accurate models and calculations. Be advised that there are bugs in the program. Relative to both these statements, you should use the program with caution.
Program Download
This software was built to run on the Microsoft Windows platform with .NET Version 2.0 framework. It can be made to run on Linux and the Mac OS as well. For download links and instructions, select your operating system below.
Team
- Richard Southwick (ECE, Summer 2003)
- Aaron Sup (Physics Special Lecturer)
- Dr. Amit Jain (Computer Science)
- Bill Knowlton (ECE & MSE)
References
Primary Reference
Richard G. Southwick III, and William B. Knowlton, Stacked Dual Oxide MOS Energy Band Diagram Visual Representation Program, IEEE Transactions on Device and Materials Reliability, Vol. 6, No. 2 (2006) p. 136-145.
Additional References
[1] Richard Southwick III, Michael Ogas and William B. Knowlton, Interactive dual oxide MOS energy band diagram program, poster presentation at the 2005 IEEE International Integrated Reliability Workshop, (October 2005).
[2] Aaron Sup, Richard G. Southwick III, Amit Jain, and William B. Knowlton, Arbitrary Oxide Multi-Layer MIM Energy Band Diagram Program, poster presentation at the 2007 IEEE International Integrated Reliability Workshop, (October 15-18, 2007).
[3] Richard Southwick III, Aaron Sup, Amit Jain, and W.B. Knowlton, Multi-Layer Metal-Insulator-Semiconductor (MIS) Energy Band Diagram Program, poster presentation at the 2008 IEEE International Integrated Reliability Workshop, (October 2008).