Dual Gate Dielectric Band Diagram Program
For a new version of the Band Diagram Program click here.
Our research group has developed an easy to use interactive program which runs on a PC. This program is useful for visualizing approximations of energy band diagrams and performing back of the envelope calculations of important parameters for these diagrams. In more detail, the program can do the following:
1. Draw the band diagram for MOS devices in both static and movie modes
2. Draw the band diagrams for gate stacks with various dielectrics including high K dielectrics
3. Calculate parameters such as electric fields, voltage drops, capacitance, EOT, etc. as a function of dielectric thicknesses and applied voltage both in inversion and accumulation.
In order to draw the diagram and calculate the parameter, many simplifying assumptions have been made and incorporated into the program.. These assumptions are listed in the program and below. Please feel fee to use it under the terms and conditions listed in the program. The program will expire in June 2008 and will have an updated version at that time. Please download another copy and provide comments and feedback to:
Bill Knowlton - bknowlton@boisestate.edu
Richard Southwick III - rickisouthwickIII@boisestate.edu
Download
Band Diagram [6 4 08].exe (download)
References
[1] Richard Southwick III, Michael Ogas and William B. Knowlton, Interactive dual oxide MOS energy band diagram program, poster presentation at the 2005 IEEE International Integrated Reliability Workshop, (October 2005).
[2] Southwick III*, Richard G. and William B. Knowlton, Stacked Dual Oxide MOS Energy Band Diagram Visual Representation Program, IEEE Transactions on Device and Materials Reliability, Vol. 6, No. 2 (2006) p. 136-145.
- Updated Program (March 1, 2006): the program has been modified to allow:
1. The generation of .wmf files so band diagram pictures can be saved. Once they are saved, they can be modified and cropped. Use the new "Save Picture" key to save the .wmf file.
2. The ability to choose between a variety of dielectric materials (HfO2, ZrO2, La2O3, etc; ~9 total), for both gate oxides and metal gate electrodes (e.g., poly-Si, TiN, Ti, W, etc.; ~9 total) using pull-down menus.
3. Fowler-Nordheim electron tunneling distance for gate injection only. (3/06)
4. By selecting "View Options", color changes are now available. Additionally, any changes made within "View Options" are immediately seen within "View Options" without having to return to the main window of the program. (3/06)
5. A 2nd order inversion surface potential model has been incorporated. There is a radio button that allows the user to switch between the 1st and 2nd order models. (4/24/06)
6. A new button called "Export" has been added to provide the output of raw data that allows for graphing in Excel, Origin, or other programs which accept comma-separated values *.csv files. (4/24/06)
- Updated Program (December 3, 2007): the program has been modified to allow:
1. Material Parameters for Nb2O3 and CeO2 have been added. The band gap for La2O3 has been changed to 6eV to reflect the current literature
Note: the default gate stack materials system is TiN/HfO2/SiO2/Si. and the parameters used for the dielectric materials and metal gate electrodes are estimates and can be easily changed. Please understand that this program is to be used to gain familiarity of energy band diagrams under bias and is not to meant to replace more accurate models and calculations. Be advised that there are bugs in the program. Relative to both these statements, you should use the program with caution.