The research work carried out in the group is mainly related to characterization of the structure and radiation induced effects (RIE) in chalcogenide glasses (ChG) doped with Ag or Cu, as well as formation and testing of conductive bridge memristors (CBRAM) and arrays based on them. Further aspect of the research work developed in the team is related to formation of radiation sensors utilizing the radiation sensitivity of ChG and radiation induced ions diffusion in them. These sensors are two-terminal micro devices with a Ag/Cu source region and a ChG based active region. Exposure to ionizing radiation stimulates RIE in the active region which promotes Ag/Cu diffusion and incorporation in the ChG thereby changing the material’s resistivity by orders of magnitude.
The amorphous thin film based microelectronic nanoionic memristive devices are low cost, applicable to non-planar substrates. The γ radiation sensors produce an easily measured change in electrical resistance.
This work has been funded by the United States Department of Energy and the Department of Defense.
D. Nesheva, M. Ailavajhala, P. Chen, M. Mitkova, et al., “Study of gamma radiation induced effects in Ge-rich chalcogenide thin films,” RAD INt. Conference, Nis Serbia, (2012) 19-22.
M. Mitkova, Y. Sakaguchi, et al. Structural Details of Ge-Rich and Silver-doped Chalcogenide Glasses for Nanoionic and Nonvolatile Memory. Phys. Status Solidi (a) 207, (2010) 621.
For more information, please contact Dr. Maria Mitkova at email@example.com.